Multi Functional Mosfet Power Transistor Halogen - Free Devices Available
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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Mosfet Power Transistor Description The Power MOSFET is a type of MOSFET. The operating principle of power MOSFET is similar to the general MOSFET. The power MOSFETS are very special to handle the high level of powers. It shows the high switching speed and by comparing with the normal MOSFET, the po... Bekijk meer
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Originele Hoogspanningsmosfet Mosfet van de Machtstransistor Bestuurder Using Transistor
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: OTOMO
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Original High Voltage Mosfet Transistor , Mosfet Driver Using Transistor High Voltage Mosfet Transistor Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the ... Bekijk meer
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8H02ETS dubbele n-Kanaalmosfet Lage de Poortlast van de Machtstransistor 20V
Prijs: Negotiated
MOQ: 1000-2000 PCS
Tijd om te bezorgen: 1 - 2 Weeks
Merk: OTOMO
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20V N+N-Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) &l... Bekijk meer
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field effect transistor. It is specially designed to handle high-level powers. The power MOSFET’s are constructed in a V configuration. Therefore, it is also called as V-MOSFET, VFET. The symbols of N- ... Bekijk meer
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N Channel Mos Field Effect Transistor , High Power Transistor -30V/-80A
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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N Channel Mos Field Effect Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Fiel... Bekijk meer
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Fast Switching Time Mos Field Effect Transistor , Power Switch Transistor
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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Mos Field Effect Transistor Description Mos Field Effect Transistor are used in many power supply and general power applications, especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P ... Bekijk meer
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High Performance Mosfet Power Transistor With Extreme High Cell Density
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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Highest Performance Mosfet Power Transistor With Extreme High Cell Density Mosfet Power Transistor Feature Description It is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteri... Bekijk meer
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High Performance Mosfet Power Transistor With Extreme High Cell Density
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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General Description The AOD240 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Power losses are minimized due to an extremely low combination of R DS(ON) and C rss .In addition, switching behavior is well controlled with a ... Bekijk meer
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OEM High Frequency Switching Transistor , Power Switch Transistor -30V -70A
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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General Description The AOD403/AOI403 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number Status ... Bekijk meer
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High Voltage Switching Mosfet Power Transistor With High Thermal Resistance
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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General Description The AOD407 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. -RoHS Compliant -Halogen Free* Parameters ... Bekijk meer
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Durable High Speed Power Switching Transistor , Power Darlington Transistor
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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General Description • Trench Power MV MOSFET technology • Low R DS(ON) • Low Gate Charge • Optimized for fast-switching applications Application Synchronus Rectification in DC/DC and AC/DC Converters Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS (V) VGS (... Bekijk meer
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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High Switching Speed Mosfet Power Transistor For Linear Power Supplies General Description • Trench Power MOSFET technology • Low R DS(ON) • Logic Level Driving • RoHS and Halogen-Free Compliant Application • Industrial and Motor Drive applications Parameters Part Number Status Package Polarity VDS... Bekijk meer
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6.0A 20V SOP-8 Mosfet Power Transistor For Battery Protection
Prijs: Negotiated
MOQ: Negotiation
Tijd om te bezorgen: 1 - 2 Weeks
Merk: Hua Xuan Yang
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General Description: The AP9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID = 6A RDS(ON) < 2... Bekijk meer
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MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel
Prijs: Negotiable
MOQ: 960
Tijd om te bezorgen: 5-15days
Merk: OTOMO
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MCU 32-Bit M3 LQFP-64 STM32F103RCT6 Applied to the printer control panel32-Bit FLASH ARM® Cortex®-M3 72MHz 2V ~ 3.6V LQFP-64_10x10x05P ST Microelectronics RoHS Bekijk meer
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Hoge Huidige Mosfet Dubbele N het Type van Machtstransistor Hoge Prestaties
Prijs: Negotiated
MOQ: 1000-2000 PCS
Tijd om te bezorgen: 1 - 2 Weeks
Merk: OTOMO
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HXY4812 0V Dual N-Channel MOSFET General Description The HXY4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electric... Bekijk meer
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Mosfet van 6.5A 30V N-Channel van de Machtstransistor Dubbele Ononderbroken Afvoerkanaalstroom
Prijs: Negotiated
MOQ: 1000-2000 PCS
Tijd om te bezorgen: 1 - 2 Weeks
Merk: OTOMO
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HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum Ratings T =25°C unless otherwise noted Electr... Bekijk meer
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HXY9926A logicamosfet Schakelaar, Mosfet het Dubbele N Kanaal van de Machtsschakelaar ±1.2v VGS
Prijs: Negotiated
MOQ: 1000-2000 PCS
Tijd om te bezorgen: 1 - 2 Weeks
Merk: OTOMO
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HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-direction... Bekijk meer
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Mosfet van het RoHS Dubbele N Kanaal MOSFETS 6,0 A VDSS van de Machtstransistor dronkaard-23-6L
Prijs: Negotiated
MOQ: 1000-2000 PCS
Tijd om te bezorgen: 1 - 2 Weeks
Merk: OTOMO
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8205A SOT-23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low Gate Charge z High Power and C... Bekijk meer
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